Hot-electron substrate-current generation during switching transientsFU-CHIEH HSU; KUANG YI CHIU.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 394-399, issn 0018-9383Article

A SIMPLIFIED MODEL OF SHORT-CHANNEL MOSFET: CARACTERISTICS IN THE BREAKDOWN MODEFU CHIEH HSU; MULLER RS; CHENMING HU et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 571-576; BIBL. 9 REF.Article

A simple punchthrough model for short channel MOSFET'sFU-CHIEH HSU; MULLER, R. S; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1983, Vol ED30, Num 10, pp 1354-1359, issn 0018-9383Article

AN ANALYTICAL BREADOWN MODEL FOR SHORT-CHANNEL MOSFET'SFU CHIEH HSU; PING KEUNG KO; SIMON TAM et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1735-1740; BIBL. 8 REF.Article

Hot-electron-induced MOSFET degradation―model, monitor, and improvementCHEMMING HU; TAM, S. C; FU-CHIEH HSU et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 375-385, issn 0018-9383Article